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july 2006 rev 5 1/16 16 STD70NH02L STD70NH02L-1 n-channel 24v - 0.0062 ? - 60a - dpak/ipak stripfet? ii power mosfet general features r ds(on) * q g industry?s benchmark conduction losses reduced switching losses reduced low threshold device description the device utilizes the la test advanced design rules of st?s proprietary stripfet? technology. this is suitable for the most demanding dc-dc converter application where high efficiency is to be achieved. applications switching application internal schematic diagram type v dss r ds(on) i d STD70NH02L-1 24v <0.008 ? 60a (1) 1. value limited by wire bonding STD70NH02L 24v <0.008 ? 60a (1) dpak 1 3 3 2 1 ipak www.st.com order codes part number marking package packaging STD70NH02Lt4 d70nh02l dpak tape & reel STD70NH02L-1 d70nh02l ipak tube
contents STD70NH02L - STD70NH02L-1 2/16 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD70NH02L - std70nh0 2l-1 electrical ratings 3/16 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v spike (1) 1. guaranted when external rg= 4.7 ? and tf electrical characteristics STD70NH02L - STD70NH02L-1 4/16 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 25ma, v gs =0 24 v i dss zero gate voltage drain current (v gs = 0) v ds = 20v v ds = 20v, t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1 1.8 v r ds(on) static drain-source on resistance v gs = 10v, i d = 30a v gs = 5v, i d = 15a 0.0062 0.008 0.008 0.014 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward transconductance v ds = 10v, i d = 18a 27 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1mhz, v gs = 0 2050 545 70 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 10v, i d = 40a r g =4.7 ? v gs = 4.5v (see figure 13 ) 12 200 18 25 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 5v, i d = 60a, v gs = 10v, r g =4.7 ? (see figure 14 ) 17 7.7 3.5 22 nc nc nc q oss (2) 2. q oss. = c oss * ? vin, c oss = c gd + c gd. see chapter 4: appendix a output charge v ds =10v, v gs =0v 14 nc r g gate input resistance f=1mhz gate dc bias =0 test signal level =20mv open drain 1 ?
STD70NH02L - STD70NH02L-1 electrical characteristics 5/16 table 5. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 60 240 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 30a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60a, di/dt = 100a/s, v dd = 15v, t j = 150c (see figure 15 ) 36 35 3.6 ns c a
electrical characteristics STD70NH02L - STD70NH02L-1 6/16 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STD70NH02L - STD70NH02L-1 electrical characteristics 7/16 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized bv dss vs temperature
test circuit STD70NH02L - STD70NH02L-1 8/16 3 test circuit figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform
STD70NH02L - STD70NH02L-1 appendix a 9/16 4 appendix a the power losses associated with the fets in a synchronous buck converter can be estimated using the equations shown in the table below. the formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. however a very important parameter, the working temperature, is not considered. the real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. the low side (sw2) device requires: very low r ds(on) to reduce conduction losses small qgls to reduce the gate charge losses small coss to reduce losses due to output capacitance small qrr to reduce losses on sw1 during its turn-on the cgd/cgs ratio lower than vth/vgg ratio especially with low drain to source voltage to avoid the cross conduction phenomenon; the high side (sw1) device requires: small rg and ls to allow higher gate current peak and to limit the voltage feedback on the gate small qg to have a faster commutation and to reduce gate charge losses low r ds(on) to reduce the conduction losses. figure 19. buck converter: power losses estimation table 6. power losses calculation high side switching (sw1) low side switch (sw2) pconduction pswitching zero voltage switching * i * r 2 l ds(on)sw1 ) 1 ( * i * r 2 l ds(on)sw2 ? g l i i * f * ) q (q * v gd(sw1) gsth(sw1) in +
appendix a STD70NH02L - STD70NH02L-1 10/16 pdiode recovery (1) not applicable conductio n not applicable pgate(q g ) p qoss 1. dissipated by sw1 during turn-on table 7. paramiters meaning parameter meaning d duty-cycle q gsth post threshold gate charge q gls third quadrant gate charge pconduction on state losses pswitching on-off transition losses pdiode conduction and reverse recovery diode losses pgate gate drive losses p qoss output capacitance losses table 6. power losses calculation high side switching (sw1) low side switch (sw2) f * q * v rr(sw2) in f * t * i * v deadtime l f(sw2) f * v * q gg g(sw1) f * v * q gg gls(sw2) 2 f * q * v oss(sw1) in 2 f * q * v oss(sw2) in
STD70NH02L - STD70NH02L-1 package mechanical data 11/16 5 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STD70NH02L - STD70NH02L-1 12/16 dim. mm. inch min. typ max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 d1 5.1 0.200 e 6.4 6.6 0.252 0.260 e1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l 1 0.039 (l1) 2.8 0.110 l2 0.8 0.031 l4 0.6 1 0.023 0.039 r 0.2 0.008 v2 0 8 0 8 dpak mechanical data 0068772-f
STD70NH02L - STD70NH02L-1 package mechanical data 13/16 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
packing mechanical data STD70NH02L - STD70NH02L-1 14/16 6 packing mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
STD70NH02L - STD70NH02L-1 revision history 15/16 7 revision history table 8. revision history date revision changes 09-sep-2004 2 preliminary version 10-feb-2005 3 complete version with curves 04-feb-2006 4 inserted new package: ipak 19-jul-2006 5 new template, no content change
STD70NH02L - STD70NH02L-1 16/16 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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